In this study, we propose a high current gain Vibrating-Body Field-Effect Transistor (Vertical VB-FET). The device has a specific structure in which drain, channel, and source electrodes of the FET are stacked. Since the current flow direction in the device is perpendicular to the wafer surface, the W/Lc (W : channel width, Lc : channel length) value is increased and improved the properties of Vertical VB-FET. In order to evaluate the dynamic properties, we derived the Lagrange's function and the dissipation function from a resistance-capacitance ladder equivalent circuit. Using these functions, we calculated the transconductance and current gain for a ring structured VB-FET. As a result, the estimated transconductance of the Vertical VB-FET was 1.81×10-2mS, whereas 1.78×10-4mS for the conventional type VB-FET with the same structure dimensions. The current gain of the vertical VB-FET also increased 15 times as large as the conventional one.
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