粉体および粉末冶金
Online ISSN : 1880-9014
Print ISSN : 0532-8799
ISSN-L : 0532-8799
活性化反応蒸着法によるFe3O4単結晶薄膜の合成
藤井 達生坂本 正勝浅野 光洋難波 徳郎尾坂 明義三浦 嘉也高田 潤志村 健一寺嶋 孝仁坂東 尚周
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1992 年 39 巻 11 号 p. 981-984

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(111)- and (100)-oriented Fe3O4 films were epitaxially formed on a-A12O3(0001) and MgO(100) single-crystalline substrates, respectively, by reactive evaporation method. The formation ranges of the epitaxial Fe304 films were determined as a function of substrate temperature, oxygen partial pressure, and a deposition rate. Their crystalline qualities were examined by various methods such as X-ray diffraction, RHEED and resistivity mesurements. A lattice mismatch of about 0.3% between Fe3O4 and MgO was very small. Then the film deposited on MgO seemed to have a good crystallinity and a smooth surface. Moreover the Verwey transition was clearly detected by a resistivity mesurement at about 110K. The transition temperature was nearly consistent with that of the bulk, indicating a good stoichiornetry of the sample film.

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