電気学会論文誌C(電子・情報・システム部門誌)
Online ISSN : 1348-8155
Print ISSN : 0385-4221
ISSN-L : 0385-4221
<電子デバイス>
縦型ダブルゲートMOSFETデバイス技術
昌原 明植柳 永〓遠藤 和彦松川 貴鈴木 英一
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2006 年 126 巻 6 号 p. 702-707

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The Silicon device technology is facing to several difficulties. Especially, explosion of power consumption due to short channel effects (SCEs) becomes the biggest issue in further device scaling down. Fortunately, double-gate (DG) MOSFETs have promising potential to overcome this obstacle. The DG-MOSFET is recognized to be the most scalable MOSFET for its high SCEs immunity. In addition, independent DG-MOSFET (4T-DG-MOSFET) has great advantage to enable the threshold voltage control for the flexible power management. Through this work, we have realized ideal DG-MOSFETs using newly-developed vertical DG-MOSFET device technology. This article presents the effectiveness of the vertical DG-MOSFETs in future high-performance and ultra-low-power CMOS circuits.

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© 電気学会 2006
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