Growth of MnAs on S- and Se-passivated GaAs substrates

T. Uragami; K. Ono; M. Mizuguchi; T. Mano; H. Fujioka; M. Oshima; M. Tanaka; Y. Watanabe

doi:10.3379/jmsjmag.23.694

Chapter 9. Novel Magnetic Phenomena

Growth of MnAs on S- and Se-passivated GaAs substrates

T. Uragami, K. Ono, M. Mizuguchi, T. Mano, H. Fujioka, M. Oshima, M. Tanaka, Y. Watanabe

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Keywords: epitaxial film, surface passivation, MBE growth, MnAs, magnetic anisotropy

JOURNAL OPEN ACCESS

1999 Volume 23 Issue 1_2 Pages 694-696

DOI https://doi.org/10.3379/jmsjmag.23.694

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Abstract

We have grown ferromagnetic MnAs thin films on S- and Se-passivated GaAs substrates by molecular beam epitaxy (MBE). Growth modes of MnAs films on GaAs(100) substrates were changed by the surface treatment. We found that on the clean and the Se-passivated surfaces, MnAs films grow by a layer-by-layer mode. In contrast, on the S-passivated surface MnAs grows by an island growth mode. and polycrystalline films are obtained. We also found that the magnetization of the MnAs film on Se-passivated surface is larger than that on clean and S-passivated surfaces

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