Magnetotransport Properties of (Ga, Mn)As/GaAs/(Ga, Mn)As Trilayer Structures

F. Matsukura; N. Akiba; A. Shen; Y. Ohno; A. Oiwa; S. Katsumoto; Y. Iye; H. Ohno

doi:10.3379/jmsjmag.23.99

Chapter 1. Spin Dependent Transport

Magnetotransport Properties of (Ga, Mn)As/GaAs/(Ga, Mn)As Trilayer Structures

F. Matsukura, N. Akiba, A. Shen, Y. Ohno, A. Oiwa, S. Katsumoto, Y. Iye, H. Ohno

Author information

F. Matsukura
Laboratory for Electronic Intellingent Systems, Research Institute of Electrical Communication, Tohoku University
N. Akiba
Laboratory for Electronic Intellingent Systems, Research Institute of Electrical Communication, Tohoku University
A. Shen
Laboratory for Electronic Intellingent Systems, Research Institute of Electrical Communication, Tohoku University
Y. Ohno
Laboratory for Electronic Intellingent Systems, Research Institute of Electrical Communication, Tohoku University
A. Oiwa
Institute for Solid State Physics, University of Tokyo
S. Katsumoto
Institute for Solid State Physics, University of Tokyo
Y. Iye
Institute for Solid State Physics, University of Tokyo
H. Ohno
Laboratory for Electronic Intellingent Systems, Research Institute of Electrical Communication, Tohoku University

Keywords: (Ga, Mn)As, III-V semiconductor, trilayer structure, exchange coupling, RKKY interaction

JOURNAL OPEN ACCESS

1999 Volume 23 Issue 1_2 Pages 99-101

DOI https://doi.org/10.3379/jmsjmag.23.99

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Abstract

All-semiconductor ferromagnet/nonmagnet/ferromagnet trilayer structures using (Ga, Mn)As as a ferromagnetic layer and GaAs a nonmagnetic layer were prepared and their magnetotransport properties were investigated. The results show that the interaction between the two (Ga, Mn)As layers decreases as the GaAs thickness increases. This shows that the carriers present in the nonmagnetic layer mediate the coupling between the two ferromagnetic layers in the present all-semiconductor system.

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