Single Crystal Growth and Electrical Properties of Lanthanum- and Gadolinium-Doped BaTiO3

Naobumi MOTOHIRA; Hideaki OKAMOTO; Yoshinobu NAKAMURA; Akira KISHIMOTO; Masaru MIYAYAMA; Hiroaki YANAGIDA

doi:10.2109/jcersj.104.273

Single Crystal Growth and Electrical Properties of Lanthanum- and Gadolinium-Doped BaTiO₃

Naobumi MOTOHIRA, Hideaki OKAMOTO, Yoshinobu NAKAMURA, Akira KISHIMOTO, Masaru MIYAYAMA, Hiroaki YANAGIDA

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Keywords: BaTiO₃, Single crystal, Floating zone method, Low resistance, Reducing treatment

JOURNAL FREE ACCESS

1996 Volume 104 Issue 1208 Pages 273-276

DOI https://doi.org/10.2109/jcersj.104.273

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Abstract

Single crystals of (Ba_0.96-xLn_xSr_0.04)TiO₃ (Ln=La, Gd) were grown over a composition range of x=0.001 to 0.03. Electrical resistivities of the single crystals were measured by the DC four-probe method. The temperature dependence of resistivities of these crystals changed from semiconductive to metallic at the Curie temperature (T_C). Although the room temperature resistivities of Gd-doped single crystals were independent of Gd concentration of 1 to 3%, they decreased monotonically with increasing the dopant concentration after annealing in a reducing atmosphere.

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