Non-equilibrium Green function simulations of graphene, silicene, and germanene nanoribbon field-effect transistors

Casey Clendennen; Nobuya Mori; Hideaki Tsuchiya

doi:10.15748/jasse.2.171

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Non-equilibrium Green function simulations of graphene, silicene, and germanene nanoribbon field-effect transistors

Casey Clendennen, Nobuya Mori, Hideaki Tsuchiya

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Keywords: graphene, silicene, germanene, nanoribbon, FET, NEGF

JOURNAL FREE ACCESS

2015 Volume 2 Issue 1 Pages 171-177

DOI https://doi.org/10.15748/jasse.2.171

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Abstract

Ballistic performance of graphene, silicene, and germanene-nanoribbon field-effect transistors (FETs) with a gate-length of 10 nm has been numerically investigated. The graphene-nanoribbon FET is found to have the largest ON-current when one compare FETs with a nanoribbon channel having a nearly equal band-gap E_g ≈ 0.5 eV. The graphene device exhibits the largest OFF-current due to the smallest effective-mass enhancing the source-drain direct tunneling.

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